CMOS Processors and Memories
Krzysztof Iniewski
ISBN: 978-90-481-9215-1
Springer 2010
English
PDF 17MB


The only book on the market that covers advanced circuits for emerging technologies beyond standard CMOS circuit books
Written by a mixture of top industrial experts and key academic professors. Practical enough to understand how these technologies work, but not a product manual. Scientific enough but not pure academic theory from the ivory tower
Exploits potential behind new materials (SOI, SiGe, strained Si) that might carry circuit performance beyond standard bulk CMOS technology

CMOS Processors and Memories addresses the-state-of-the-art in integrated circuit design in the context of emerging computing systems. New design opportunities in memories and processor are discussed. Emerging materials that can take system performance beyond standard CMOS, like carbon nanotubes, graphene, ferroelectrics and tunnel junctions are explored.

CMOS Processors and Memories is divided into two parts: processors and memories. In the first part we start with high performance, low power processor design, followed by a chapter on multi-core processing. They both represent state-of-the-art concepts in current computing industry. The third chapter deals with asynchronous design that still carries lots of promise for future computing needs. At the end we present a “hardware design space exploration” methodology for implementing and analyzing the hardware for the Bayesian inference framework. This particular methodology involves: analyzing the computational cost and exploring candidate hardware components, proposing various custom architectures using both traditional CMOS and hybrid nanotechnology CMOL. The first part concludes with hybrid CMOS-Nano architectures.

The second, memory part covers state-of-the-art SRAM, DRAM, and flash memories as well as emerging device concepts. Semiconductor memory is a good example of the full custom design that applies various analog and logic circuits to utilize the memory cell’s device physics. Critical physical effects that include tunneling, hot electron injection, charge trapping (Flash memory) are discussed in detail. Emerging memories like FRAM, PRAM and ReRAM that depend on magnetization, electron spin alignment, ferroelectric effect, built-in potential well, quantum effects, and thermal melting are also described.

CMOS Processors and Memories is a must for anyone serious about circuit design for future computing technologies. The book is written by top notch international experts in industry and academia. It can be used in graduate course curriculum.

Content Level » Professional/practitioner

Keywords » Analog VLSI - CMOS - Digital VLSI - Nanoelectronics

Related subjects » Circuits & Systems - Engineering - Materials

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